Fabrication and characterization of ZnO:Sb/n-ZnO homojunctions

Antimony-doped ZnO layers have been grown by metalorganic vapour-phase epitaxy on sapphire and substrates at high-temperature (950 °C) low-pressure conditions (50 torr). Nitrous oxide diethyl-zinc used as oxygen zinc precursors, respectively. The incorporation of antimony has obtained from the decomposition triethylantimony doping molecules added in gas phase. High Sb concentrations were measured 1019 to 1021 at/cm−3 using secondary ion mass spectroscopy depend nature orientation substrate. Low-temperature photoluminescence spectra Sb-doped exhibit donor–acceptor pair transitions 3.253 eV. Unlike Raman nitrogen-doped which show several local vibrational modes related nitrogen incorporation, these found be absent antimony-doped layers. Transmission electron microscopy suggests that is partly dislocations other structural defects. All together, characterizations suggest formation acceptor dopant–defect complexes, such SbZn-2VZn. Finally, ZnO:Sb/n-ZnO homojunction diodes successfully elaborated current–voltage characteristics device a rectifying behaviour with turn-on voltage 3 V.